High purity Indium 99.9999% (6N)
|
Impurity |
Content, ppm |
Impurity |
Content, ppm |
Impurity |
Content, ppm |
|
Ag |
<0.006 |
Fe |
0.02 |
S |
<0.1 |
|
As |
<0.003 |
Ga |
<0.006 |
Se |
<0.003 |
|
Al |
0.03 |
Mg |
<0.01 |
Sn |
<0.02 |
|
Bi |
<0.03 |
Mn |
<0.001 |
Te |
<0.01 |
|
Cd |
<0.03 | Ni | <0.01 | Tl | <0.03 |
|
Cu |
<0.02 |
Pb |
<0.02 |
Zn | <0.003 |
| High Purity Indium | High Purity Indium for: |
 |
– LCD TVs and computer monitors in the form of indium tin oxide (ITO); – as a starting material in the manufacture of AIIIBV semiconductor materials such as: InP, InAs, InSb, InGaAs, InGaAsP, for infrared detectors and LEDs, ultra-high-efficiency photovoltaic solar cells, electronic switches; – as a starting material for multilayer semiconductor layering using liquid-phase, vapor-phase or molecular beam epitaxy. |
Contacts
Nikolaev Institute of Inorganic Chemistry SB RAS
Acad. Lavrentyev ave., 3, Novosibirsk, Russia, 630090
Phone: (383) 330 9486
E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.; This email address is being protected from spambots. You need JavaScript enabled to view it.