Jun-ichi NishizawaPresident Tokyo Metropolitan University, Director Semiconductor Research Institute Kawauchi, Aoba-ku, Sendai 980 Japan

1-1 Minami-Ohsawa, Hachioji-shi, Tokyo, Japan 192-0397
TEL. 81-426-77-2005 FAX. 81-426-77-1221
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Tel: +81-22-223-7287
Fax: +81-22-223-7289
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His main work has involved the inventions of p-i-n diodes and p-n-i-p (n-p-i-n) transistors in cooperation with p-i-n photodiodes (1950), ion implantation (1950), avalanche photodiodes (1952), semiconductor injection lasers (1957), solid-state focusing optical fibers (1964), and transit time effect negative-resistance diodes (1954), including the avalanche injection and the tunnel injection (1958), hyperabrupt variable capacitance diodes (1959), semiconductor inductance (1957), static induction transistor (SIT) (1950, 1971), etc.

At present, he is carrying out work specializing in the development of static induction transistors to high-frequency and high-power devices, the high-speed thyristor, and the high-speed and low power dissipation integrated circuit, and growth methods of III-V compound semiconductors: a temperature different method under controlled vapor pressure (TDM-CVP) giving rise to high-efficiency LED and long-life laser diodes based on silicon perfect crystal technology by lattice constant compensation. He also originated electroepitaxy (1995), photoepitaxy (1961) and molecular layer epitaxy (MLE) (1984). He discovered the avalanche effect in semiconductors and explained the backward character of the p-n junction by this effect (1953).

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